| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor device which is one of a plurality of semiconductor devices manufacturable from one wafer in a higher yield. <P>SOLUTION: This semiconductor device is characterised by being constituted of a semiconductor element area 2 formed on a main surface 1, a first bonding pad 3 arrayed along the outer peripheral part of the semiconductor element area 2, a passivation film 4 formed on the main surface 1 excluding the formation part of the first bonding part 3 for protecting the semiconductor element area 2, a first insulating film 5 formed on the passivation film 4, rewiring 6 formed on the first insulating film 5 with one end connected to the first bonding pad 3, a second insulating film 7 formed on the first insulating film 5 for protecting the rewiring 6, and a bump electrode 9 set on a second bonding pad 8 formed at the other end of the rewiring 6. The semiconductor device is also characterised in that the outer peripheral edge of the second insulating film 7 is matched with the outer peripheral edge of the first insulating film 5, or arranged inside the outer peripheral edge of the first insulating film 5 excluding at least the four corner parts of the main surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
