| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics and yield of a semiconductor device by preventing the disappearance of the adjacent explosion preventing protective films of fuses. SOLUTION: When the thicknesses of insulating films formed on the fuses F are reduced by etching the films, silicon oxide films 15 are caused to deposit on the surfaces of adjacent explosion preventing films (for example, Ti/TiN/W films) 7 exposed from a silicon oxide film 5 and polyimide films 17, barrier seed layers (for example, TiN/Ti film) 19a, and seed layers (for example, Cu film) 19b are formed. Then, a resist film having wiring grooves is formed, and Cu films 19c and Ni films 19d are formed in the wiring grooves by the electroplating method. Consequently, the adjacent explosion preventing films 7 are not eroded at the time of forming rewiring by etching the seed layers 19b and barrier seed layers 19a by using the Ni films 19d etc., as masks, because the surfaces of the films 7 are covered with the silicon oxide films 15. COPYRIGHT: (C)2005,JPO&NCIPI
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