发明名称 |
MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication |
摘要 |
The present invention includes a MOS device (100) that has a P-type substrate (102) and an N-type drain region (104) formed within the substrate (102). An annular N-type source region (106) generally surrounds the drain region (104). The source region (106) serves as both the source for the MOS device (100) and a sacrificial collector guard ring for an electrostatic discharge protection circuit. An annular gate region (110) generally surrounds the drain region (104) and is electrically insulated from the drain region (104) and electrically connected to the source region (106). An annular P-type bulk region (108) generally surrounds the source region (106) and is electrically connected to the source region (106).
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申请公布号 |
US2005007216(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20030609920 |
申请日期 |
2003.06.30 |
申请人 |
BALDWIN DAVID JOHN;DEVORE JOSEPH A.;STEINHOFF ROBERT;BRODSKY JONATHAN |
发明人 |
BALDWIN DAVID JOHN;DEVORE JOSEPH A.;STEINHOFF ROBERT;BRODSKY JONATHAN |
分类号 |
H01L27/02;H01L29/06;H01L29/423;(IPC1-7):H01P1/20 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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