发明名称 Memory cells with nonuniform floating gate structures and methods of forming the same
摘要 In a floating gate memory cell including a floating gate separated from an active region by a tunnel isolation region, a first one of the active region and the floating gate comprises a portion that protrudes towards a second one of the active region and the floating gate. In some embodiments, the protruding portion tapers toward the second one of the active region and the floating gate. The tunnel insulation layer may be narrowed at the protruding portion. Protruding portions may be formed on both the floating gate and the active region.
申请公布号 US2005006695(A1) 申请公布日期 2005.01.13
申请号 US20030726768 申请日期 2003.12.03
申请人 LEE JAE-DUK;PARK DONG-GUN;CHOI JEONG-HYUK 发明人 LEE JAE-DUK;PARK DONG-GUN;CHOI JEONG-HYUK
分类号 H01L21/28;H01L29/423;H01L29/788;(IPC1-7):H01L29/788 主分类号 H01L21/28
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