| 摘要 |
PROBLEM TO BE SOLVED: To provide a cubic boron nitride film having satisfactory crystallinity. SOLUTION: The cubic boron nitride film is obtained by a gas phase without using ultrahigh pressure and clearly exhibits, in the Raman spectrum, either the characteristic scattering by a phonon of a longitudinal optical mode in the vicinity of 1,305 cm<SP>-1</SP>or the characteristic scattering by a phonon of a transverse optical mode in the vicinity of 1,056 cm<SP>-1</SP>or both the characteristic scattering. In a method where gas of a boron source and gas of a nitrogen source are reacted by using plasma to precipitate boron nitride, using gaseous fluorine or a fluorine-containing gas species as one component of a gas phase, and further, using a substrate bias, the cubic boron nitride is synthesized from the gas phase. COPYRIGHT: (C)2005,JPO&NCIPI
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