发明名称 |
FORMING COLLAR STRUCTURES IN DEEP TRENCH CAPACITORS WITH THERMALLY STABLE FILLER MATERIAL |
摘要 |
In the course of forming the collar dielectric in a DRAM cell having a deep trench capacitor, a number of filling and stripping steps required in the prior art are eliminated by the use of a spin-on material that can withstand the high temperatures required in front-end processing and also provide satisfactory filling ability and etch resistance. The use of atomic layer deposition for the formation of the collar dielectric reduces the need for a high temperature anneal of the fill material and reduces the amount of outgassing or cracking.
|
申请公布号 |
US2005009267(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20030604255 |
申请日期 |
2003.07.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BELYANSKY MICHAEL P.;DIVAKARUNI RAMA;MANDELMAN JACK A.;PARK DAE-GYU |
分类号 |
H01L21/20;H01L21/334;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|