发明名称 |
Semiconductor device and method of manufacturing semiconductor device |
摘要 |
An isolation film is formed in a surface of a substrate 1 in which active regions are formed, to separate the active regions from each other. Subsequently, a portion of the isolation film is removed, to form a recess, which is then filled with a portion of an upper electrode. Also, an insulating film 8 is interposed between the upper electrode and the substrate.
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申请公布号 |
US2005009269(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040850051 |
申请日期 |
2004.05.21 |
申请人 |
SHINKAWATA HIROKI;HACHISUKA ATSUSHI;SHIMANO HIROKI |
发明人 |
SHINKAWATA HIROKI;HACHISUKA ATSUSHI;SHIMANO HIROKI |
分类号 |
H01L21/02;H01L21/8242;H01L27/06;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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