发明名称 |
Alignment mark and method for manufacturing a semiconductor device having the same |
摘要 |
In a method for manufacturing a semiconductor device having an alignment mark, a buffer layer is formed on a substrate. A trench is formed at an isolation region of the substrate. The trench is filled with an insulating layer. An alignment groove is formed on the insulating layer in a scribe lane region of the substrate. The buffer layer is removed to form an alignment pattern. An alignment mark includes the alignment pattern and the alignment groove. Therefore, the alignment pattern may be not attacked by solutions in a successive cleaning process such that the alignment mark may be not damaged and maintains its original shape.
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申请公布号 |
US2005009287(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040874052 |
申请日期 |
2004.06.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH MYOUNG-HWAN;KANG HEE-SUNG;PARK CHANG-HYUN |
分类号 |
H01L21/027;G03F9/00;H01L21/301;H01L21/762;H01L23/544;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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