Chemical mechanical polishing pad for monitoring chemical mechanical polishing process or detecting end point, comprises polishing layer including pseudo window area, having thickness less than thickness of polishing layer

摘要

A chemical mechanical polishing (CMP) pad (3) for monitoring, comprises a polishing layer including a pseudo window area (3a), having a thickness less than a thickness of the polishing layer and a thickness greater than 0. An independent claim is also included for a method of monitoring a CMP process, comprising providing CMP pad on a platen (1); and monitoring light passed through the pseudo window area to control the CMP process.