| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for controlling pressure of a plasma processing device, and to provide a plasma processing device in which pressure can be controlled. <P>SOLUTION: The plasma processing method comprises controlling the degrees of openings of an upper pressure control valve 134 and a lower pressure control valve 146 disposed between an upper exhaust chamber UC and an upper vacuum exhaust system 136, and between a lower vacuum exhaust chamber DC and a lower vacuum exhaust system 148, respectively, to generate a predetermined displacement difference between the upper exhaust chamber UC and the lower exhaust chamber DC. The displacement difference allows gas flow (plasma flow) inside the processing chamber PC to be appropriately controlled so that uniform plasma can be introduced to a workpiece W to be processed. During the process, an upper pressure detector 138 and a lower pressure detector 140, disposed inside the exhaust chambers, respectively monitor the pressure in the respective exhaust chambers. If a pressure difference other than the requirement initially set is measured, the upper pressure control valve 134 and the lower pressure control valve 146 are appropriately controlled with maintaining the degrees of the openings constant. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
