发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that functions as a neuron element, a potential generating device, a logic transforming circuit, etc. <P>SOLUTION: In the potential generating device, the source of an n-type MIS transistor 54 and the source of a p-type MIS transistor 56 are connected to each other and, in addition, to an output terminal 55. The drain of the transistor 54 is connected to a power-supply voltage supplying section 53 which supplies a power-supply voltage VDD, and the drain of the transistor 56 is connected to the ground 57 which supplies a ground voltage VSS. In addition, the potential at the substrate of the transistor 54 is the ground voltage VSS, and the potential at the substrate of the transistor 56 is the power-supply voltage VDD. Thus, the potential generating device is constituted as a source follower circuit which takes out outputs from the sources. By utilizing this potential generating device, the logic transforming circuit which makes the switching between NOR operation and NAND operation to be executed stably is obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005012210(A) 申请公布日期 2005.01.13
申请号 JP20040171826 申请日期 2004.06.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UEDA MICHIHITO;TOYODA KENJI;MORITA KIYOYUKI;OTSUKA TAKASHI
分类号 G11C16/02;G06N3/063;G11C11/22;H01L21/8238;H01L21/8246;H01L21/8247;H01L27/092;H01L27/105;H01L27/115;H01L29/788;H01L29/792;H03K19/0175;H03K19/20;(IPC1-7):H01L21/824;H03K19/017;H01L21/823 主分类号 G11C16/02
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