发明名称 |
Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
摘要 |
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.
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申请公布号 |
US2005005841(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20030615127 |
申请日期 |
2003.07.08 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;VORONKOV VLADIMIR V. |
分类号 |
C30B33/00;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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