| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problems: the conventional one chip dual-type MOSFET has a structure of two MOSFET chips disposed with drain electrodes shorted to increase a packaging area and a resistance between the drain electrodes can not be decreased. <P>SOLUTION: The drain electrodes of the two MOSFET semiconductor chips are directly connected and the two chips are overlapped. As it is unnecessary to draw the drain electrodes outside in the dual type MOSFET, only two gate terminals and two source terminals are needed to be drawn out, and these four terminals are drawn out by a lead frame or a conductive pattern. This realizes a downsizing and a low ON-resistance of the device. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
