| 摘要 |
PROBLEM TO BE SOLVED: To use a metal having a large potential barrier for bonding a metal semiconductor of an electrostatic induction diode in order to reduce a reverse current at the time of a reverse bias, thereby increasing a hole current and increasing a quantity of a recovery charge at the time of turning-off to correct such a defect that a property deteriorates. SOLUTION: A thin film p-type semiconductor 5 is provided as a bonding between a source electrode 4 of a cathode and an n-type semiconductor 3. As other methods, there is provided a bonding of the n-type semiconductor 3 and the thin film p-type semiconductor 5 between a metal of a second bonding and the n-type semiconductor 3, or there is provided a bonding of an n-type polycrystalline semiconductor and the thin film p-type semiconductor 5 between the metal of the second bonding and the n-type semiconductor 3. COPYRIGHT: (C)2005,JPO&NCIPI
|
