| 摘要 |
PROBLEM TO BE SOLVED: To restrain a polycrystalline Si film subjected to laser annealing from varying in characteristics on a substrate due to the thickness distribution of the Si film. SOLUTION: In a laser annealing device 1, an amorphous Si film 7 on a plane is divided into a plurality of regions, the thickness of the film 7 in each region is measured with a film thickness measuring means 4, and a control means 5 regulates the oscillation output of a light source 2 or the light volume of an irradiation optical system 3 responding to a measurement output of thickness. Consequently, a laser beam irradiating the amorphous Si film is regulated in energy density. Therefore, the divided regions of a substrate 6 can be each subjected to annealing with an optimal irradiation energy density, so that the polycrystalline Si film subjected to annealing can be set uniform in crystal properties. COPYRIGHT: (C)2005,JPO&NCIPI
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