发明名称 |
Process for forming thick oxides on Si or SiC for semiconductor devices |
摘要 |
The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.
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申请公布号 |
US2005009255(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040885378 |
申请日期 |
2004.07.06 |
申请人 |
INTERNATIONAL RECTIFIER CORP. |
发明人 |
CHIOLA DAVIDE;HE ZHI |
分类号 |
H01L21/283;H01L21/04;H01L21/316;H01L21/321;H01L21/329;H01L21/338;H01L29/47;H01L29/872;H01L31/0312;(IPC1-7):H01L31/031 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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