SUBSTRATE PROCESSING APPARATUS USING PLASMA TO PREVENT SEMICONDUCTOR SUBSTRATE FROM BEING CONTAMINATED AND SHORTEN INTERVAL OF TIME NECESSARY FOR CLEANING PROCESS ON INNER SURFACES OF PROCESS CHAMBER

摘要

PURPOSE: A substrate processing apparatus using plasma is provided to prevent a semiconductor substrate from being contaminated and shorten an interval of time necessary for a cleaning process on inner surfaces of a process chamber by uniformly and sufficiently removing deposits formed on the first and second surfaces for defining upper and lower spaces while using cleaning plasma having a region extended from the upper space to the lower space. CONSTITUTION: A substrate(10) is processed in an upper space(204) by using process plasma. Reaction byproducts generated during a process for treating the substrate and process plasma used in the treatment process are exhausted by using a lower space(206). An upper electrode(210) is adjacent to the upper space. By using the upper electrode, the process gas for processing the substrate is formed of the process plasma and cleaning gas for cleaning the first surfaces is formed of cleaning plasma. A lower electrode(220) supports the substrate during the treatment process, having an upper surface adjacent to the upper space. An assist electrode(270) is adjacent to the lower space. By using the assist electrode, a cleaning plasma formation region is extended from the upper space to the lower space to clean the second surfaces for defining the lower space.