CAPACITOR, SEMICONDUCTOR DEVICE, CAPACITOR MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress a short-circuiting of a capacitor electrode accompan a silicide process while suppressing an increase in the number of steps. SOLUTION: An upper electrode 2 is provided above a lower electrode 1 via a capacitance insulating film, the upper electrode 2 is positioned so that the electrode 2 extrudes at its full peripheral end from the lower electrode 1, and the lower electrode 1 is connected to a lower electrode terminal 3 via a connection 4. COPYRIGHT: (C)2005,JPO&NCIPI