发明名称 Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device
摘要 A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
申请公布号 US2005009329(A1) 申请公布日期 2005.01.13
申请号 US20040840677 申请日期 2004.05.07
申请人 TANIDA KAZUMASA;NEMOTO YOSHIHIKO;TANAKA NAOTAKA 发明人 TANIDA KAZUMASA;NEMOTO YOSHIHIKO;TANAKA NAOTAKA
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/31;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/44;H01L21/48;H01L21/476 主分类号 H01L23/52
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