发明名称 |
Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device |
摘要 |
A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
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申请公布号 |
US2005009329(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040840677 |
申请日期 |
2004.05.07 |
申请人 |
TANIDA KAZUMASA;NEMOTO YOSHIHIKO;TANAKA NAOTAKA |
发明人 |
TANIDA KAZUMASA;NEMOTO YOSHIHIKO;TANAKA NAOTAKA |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/31;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/44;H01L21/48;H01L21/476 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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