| 发明名称 |
Semiconductor device manufacturing method e.g. for diode, involves performing electro-less plating of nickel on aluminum electrode, after forming insulation film on open electrode |
| 摘要 |
<p>An open electrode (5) is formed on a silicon substrate (1). Electro-less plating of nickel is performed on the surface of an aluminum electrode (4), after forming an insulation film (11) on the open electrode.</p> |
| 申请公布号 |
DE102004027176(A1) |
申请公布日期 |
2005.01.13 |
| 申请号 |
DE20041027176 |
申请日期 |
2004.06.03 |
| 申请人 |
FUJI ELECTRIC DEVICE TECHNOLOGY CO. LTD., TOKIO |
发明人 |
MOMOTA, SEIJI;MOCHIZUKI, EIJI |
| 分类号 |
H01L21/288;H01L21/3205;H01L21/329;H01L23/52;H01L29/06;H01L29/417;H01L29/861;(IPC1-7):H01L21/288 |
主分类号 |
H01L21/288 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
