发明名称 |
GROWTH METHOD OF NITRIDE SEMICONDUCTOR EPITAXIAL LAYERS |
摘要 |
<p>The present invention relates to a method for growing a nitride semiconductor epitaxial layer, which comprises the steps of growing a second nitride semiconductor epitaxial Iayer on a first nitride semiconductor epitaxial layer at a first temperature, growing a third nitride semiconductor epitaxial layer on the second nitride semiconductor epitaxial layer at a second temperature, and releasing nitrogen from the second nitride semiconductor epitaxial layer by increasing a temperature to a third temperature higher than the second temperature, thereby , it is possible to lower the defect density of epitaxial layers and reduce warpage of a substrate.</p> |
申请公布号 |
WO2005004212(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
WO2004KR01665 |
申请日期 |
2004.07.07 |
申请人 |
YOON, EUIJOON;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;NA, HYUNSEOK |
发明人 |
YOON, EUIJOON;NA, HYUNSEOK |
分类号 |
C30B25/18;C30B29/40;H01L21/20;H01L21/205;H01L21/762;(IPC1-7):H01L21/20 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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