| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate joining method capable of realizing an excellent joining state, a joined substrate body to be produced by using the substrate joining method and an inkjet head. SOLUTION: In a heating process (C), a resin layer 46 formed on the joining face side of a silicon wafer 24 where an electric thermal conversion body 32 is set is subjected to a heating process at a predetermined heating temperature. Then, in a pressuring process (E), both silicon wafers 24, 38 are pressurized at a joining temperature higher than the heating temperature to be joined together. COPYRIGHT: (C)2005,JPO&NCIPI
|
