发明名称 |
Avalanche photodiode |
摘要 |
An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.
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申请公布号 |
US2005006678(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040763269 |
申请日期 |
2004.01.26 |
申请人 |
HITACHI, LTD.;OPNEXT JAPAN, INC. |
发明人 |
TANAKA SHIGEHISA;FUJISAKI SUMIKO;MATSUOKA YASUNOBU |
分类号 |
H01L31/107;H01L31/062;(IPC1-7):H01L31/062 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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