发明名称 |
Optoelectronic device having dual-structural nano dot and method for manufacturing the same |
摘要 |
An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
|
申请公布号 |
US2005006636(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040912614 |
申请日期 |
2004.08.04 |
申请人 |
SHIM KYU HWAN;SONG YOUNG JOO;KIM SANG HOON;KANG JIN YEONG |
发明人 |
SHIM KYU HWAN;SONG YOUNG JOO;KIM SANG HOON;KANG JIN YEONG |
分类号 |
H01L29/12;H01L31/102;H01L33/08;H01L33/18;(IPC1-7):H01L21/00;H01L33/00 |
主分类号 |
H01L29/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|