发明名称 |
High frequency power amplifier module and semiconductor integrated circuit device |
摘要 |
Cross-band isolation characteristics are to be significantly improved without using any filtering circuit. In the central part of a semiconductor chip provided in an RF power module is formed a ground wiring layer from the upper part downward. This ground wiring layer is formed on the boundary between GSM side transistors and DCS side transistors for amplifying different frequency bands. Over the ground wiring layer are formed chip electrodes at equal intervals, and any one of the chip electrodes is connected via a bonding wire to a bonding electrode. The bonding electrode is formed over a module wiring board over which the semiconductor chip is to be mounted, and the ground wiring layer is connected to it. Harmonic signals are trapped by the ground wiring layer and the bonding wire. |
申请公布号 |
US2005009484(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20040862325 |
申请日期 |
2004.06.08 |
申请人 |
RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
IMAI SHUN;SASAKI SATOSHI;NAKAZAWA KATSUNARI;ADACHI TETSUAKI |
分类号 |
H01L21/331;H01L29/737;H03F3/195;H03F3/60;H04B1/04;(IPC1-7):H04B1/00 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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