发明名称 |
Solution-processed thin film transistor formation method |
摘要 |
An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.
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申请公布号 |
US2005009248(A1) |
申请公布日期 |
2005.01.13 |
申请号 |
US20030617114 |
申请日期 |
2003.07.09 |
申请人 |
WENG JIAN-GANG;PRASAD RAVI;ADDINGTON CARY G.;CHEUNG MAN HO |
发明人 |
WENG JIAN-GANG;PRASAD RAVI;ADDINGTON CARY G.;CHEUNG MAN HO |
分类号 |
H01L21/336;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):H01L21/84;H01L21/76;H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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