| 摘要 |
PURPOSE: A PMOS pumping circuit with improved pumping efficiency is provided to have stable pumping margin by improving the pumping efficiency through having a native NMOS transistor and a capacitor in front of the first stage. CONSTITUTION: A PMOS pumping circuit with improved pumping efficiency comprises the first stage consisting of drain voltage(VDD), the first PMOS diode(P1) connected to the first node(X01), and the first capacitor(C1) connected between the first node(X01) and the output terminal of the clock signal(CLK); the second stage consisting of the second PMOS diode(P2) connected between the first node(X01) and the second node(X02), the second capacitor(C2) connected between the second node(X02) and the output terminal of the clock inversion signal(CLKb); in front of the first stage, a native NMOS transistor(N0) of which a gate and a source is connected with the drain voltage(VDD), and a drain is connected with the PMOS diode; a capacitor(C0) connected between the drain of the native NMOS transistor and the output terminal of the clock inversion signal.
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