METHOD OF FORMING FINE PATTERN FOR FORMING GAS BLOCKING LAYER ON PHOTORESIST TO PREVENT CONTAMINATION OF LENS IN EXPOSURE EQUIPMENT

摘要

PURPOSE: A method of forming a fine pattern is provided to prevent exhaustion of a silicon gas to an exposure apparatus by using a gas blocking layer. CONSTITUTION: An etching mask layer is formed on an etching target layer. A photoresist layer is formed on the etching mask layer. A gas blocking layer is formed on the photoresist layer. A photoresist pattern is formed by a photo-lithography process. An etching mask pattern is formed by an etching process using the photoresist pattern. An etching mask pattern is formed by etching the etching mask layer. An etching target layer pattern(122) is formed by an etching process using the etching mask pattern.