METHOD FOR FORMING BUMP OF METAL LINE IN SEMICONDUCTOR FOR IMPROVING ELECTRICAL PROPERTIES OF SEMICONDUCTOR BY PREVENTING MISALIGNMENT OF BUMP DUE TO STEP OF PASSIVATION LAYER

摘要

PURPOSE: A method for forming a bump of a metal line in a semiconductor is provided to improve electrical properties of the semiconductor by preventing misalignment of a bump due to a step of a passivation layer. CONSTITUTION: A metal line(104) is formed on a semiconductor chip(102). A thick oxide layer(106) is formed on the entire surface of the semiconductor chip. The oxide layer is planarized. A silicon nitride layer(108) is formed on the oxide layer. A passivation layer for partially exposing an upper part of the metal line is formed thereon by removing selectively the silicon nitride layer and the oxide layer. A bump(112) is formed on the metal line by using a screen printing method.