PHASE CHANGE RECORDING LAYER HAVING HIGH ELECTRICAL RESISTANCE AND SPUTTERING TARGET OF FORMING THE SAME FOR REDUCING ELECTRIC CURRENT AT THE TIME OF WRITING AND ERASING OPERATION

摘要

PURPOSE: A phase change recording layer having a high electrical resistance and a sputtering target of forming the same are provided to decrease an electric current at the time of writing and erasing operation by increasing an electrical resistance of the same. CONSTITUTION: A phase change recording layer has a high electrical resistance. The phase change recording layer includes Ge of 15 to 30 atom percent, Sb of 15 to 25 atom percent, one or both of Al and Si of a total 0.1 to 13 atom percent, and the balance of Te and impurities. The phase change recording layer has a specific resistance, which is about 5*10�-12 to 5*10�1 ��*cm.