Rectifier and protection diode

摘要

The diode is formed in a semiconductor layer (32) that is weakly doped and resting on a substrate (31) that is strongly doped. The substrate has an annular region (35) that is more strongly doped than the layer and weakly doped than the substrate. Another annular region (39) extends to a surface of the region (35). An electrode with a thin layer forms a Schottky junction with the layer and rests on a portion of the region (39). An independent claim is also included for a process of forming a power diode on a substrate of single-crystal silicon.