| 摘要 |
<p>An exposure system and exposure method able to obtain a transfer pattern matching to a high precision an offset of an underlying pattern of an exposed member and improving an overlay accuracy of the underlying pattern and transfer pattern. The system and method swing an electron beam back and forth for periodically repeated forward direction correction and reverse direction correction for distortion of an underlying pattern, where "forward direction correction" means making a position over the offset of the underlying pattern an electron beam target position and "reverse direction correction" means making a position not reaching the offset of the underlying pattern the electron beam target position. Electron beam sub-deflection correction is performed to control an incidence angle of the electron beam to a mask so as to be irradiated at these positions. The desired transfer pattern is obtained by overlaying exposure by the forward direction correction and exposure by the reverse direction correction.</p> |
