| 摘要 |
PURPOSE: A semiconductor memory device with datainversion scheme is provided to improve signal integrity by inverting data in a byte unit and having no additional pins for receiving data inversion flag. CONSTITUTION: A semiconductor memory device(40) with data inversion scheme comprises a memory cell array(42); more than two of data input/output circuits(43_i, i=1-4) for transferring output data from the memory cell array to the outside after transferring input data from the outside to the memory cell array. Wherein the data input/output circuits comprises data input control circuits(45_i, i=1-4) for strobing the input data in response to an input data strobe signal; data inversion circuits(44_i, i=1-4) for inverting the input data in response to an input data inversion flag, generating an output data inversion flag, and inverting the output data in response to the output data inversion flag; a data output control circuit for generating the output data to the outside of the semiconductor memory device; an output data strobe signal interface means for generating the output data strobe signal and inputting the input data inversion flag; an input data strobe signal interface means for inputting the input data strobe signal. |
