METHOD OF MANUFACTURING FLASH MEMORY DEVICE USING NITROGEN BINDING PROCESS

摘要

PURPOSE: A method of manufacturing a flash memory device is provided to prevent abnormal oxidation encroachment in a gate oxidation process by performing a nitrogen binding process on a floating gate. CONSTITUTION: A tunnel oxide layer(120) and a floating gate electrode(130) are sequentially formed on a semiconductor substrate(110). A cleaning process is performed on the floating gate. A nitrogen binding process is performed on the resultant structure. A dielectric film(140) of an ONO(Oxide Nitride Oxide) structure and a control gate(150) are formed on the floating gate. A sidewall oxide layer(170) is formed at both sidewalls of the gate electrode structure by oxidation.