| 摘要 |
PURPOSE: A method of fabricating a flash device is provided to form a uniform gate electrode pattern by patterning a gate electrode by a hard mask layer having different material layers. CONSTITUTION: A tunnel oxide layer and a floating gate pattern are formed on a semiconductor substrate(110). A dielectric layer(114), a first conductive layer, and a metal layer(118) are sequentially formed on the entire surface of the semiconductor substrate. A hard mask layer(150) including different material layers is formed on the metal layer. The hard mask layer is patterned by using a gate mask. A gate electrode of a flash device is formed by etching sequentially the metal layer, the first conductive layer, the dielectric layer, and the floating gate pattern.
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