| 摘要 |
PURPOSE: A method of forming a metal line of semiconductor device is provided to eliminate a bridge between metal lines in a dense region by forming trenches for metal lines having good patterns on a trench oxide layer. CONSTITUTION: A trench oxide layer(22), a first nitride layer(210), and an oxide layer(220) are formed on a substrate(21). A photoresist pattern is formed on the oxide layer. The oxide layer is patterned and the photoresist pattern is removed therefrom. A second nitride layer is formed on the patterned oxide layer. A nitride layer spacer(230S) is formed on an etched sidewall of the patterned oxide layer by etching the second nitride layer. An exposed part of the first nitride layer is etched. A plurality of trenches(24-1,24-2) are formed by etching an exposed part of the trench oxide layer. All layers formed on the trench oxide layer are removed and a plurality of dense metal lines are formed by filling the trenches with conductive materials.
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