发明名称 Metal oxide semiconductor field effect transistors (MOSFETS) used in ink-jet head chips and method for making the same
摘要 A MOSFET and the method for fabricating them are disclosed to make the inkjet head chips. The MOSFET has the scaled-down junction formation for the source and drain. Using a lower temperature process and interlayer dielectric, the source and drain dopants can not be diffused deeply due to high-temperature driver-in. The contact holes of the drain are provided with plugs of refractory material to avoid spiking between the metal and silicon. This achieves the requirement of high-density devices on the print head chip.
申请公布号 US6841830(B2) 申请公布日期 2005.01.11
申请号 US20030627637 申请日期 2003.07.28
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 LIU CHIEN-HUNG;LIOU JIAN-CHIUN;CHEN CHUN-JUNG;HU JE-PING
分类号 B41J2/14;H01L21/324;H01L27/06;H01L29/78;(IPC1-7):H01L29/76;G01R19/00 主分类号 B41J2/14
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