发明名称 |
Metal oxide semiconductor field effect transistors (MOSFETS) used in ink-jet head chips and method for making the same |
摘要 |
A MOSFET and the method for fabricating them are disclosed to make the inkjet head chips. The MOSFET has the scaled-down junction formation for the source and drain. Using a lower temperature process and interlayer dielectric, the source and drain dopants can not be diffused deeply due to high-temperature driver-in. The contact holes of the drain are provided with plugs of refractory material to avoid spiking between the metal and silicon. This achieves the requirement of high-density devices on the print head chip.
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申请公布号 |
US6841830(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20030627637 |
申请日期 |
2003.07.28 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LIU CHIEN-HUNG;LIOU JIAN-CHIUN;CHEN CHUN-JUNG;HU JE-PING |
分类号 |
B41J2/14;H01L21/324;H01L27/06;H01L29/78;(IPC1-7):H01L29/76;G01R19/00 |
主分类号 |
B41J2/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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