发明名称 |
Dopant interface formation |
摘要 |
Formation of an interconnect circuit feature having a metal and an electropositive dopant. The interconnect feature may contain an accumulation of the electropositive dopant at interface boundaries of the interconnect feature to reduce electromigration of the metal during operation. In a method the interconnect feature may be heated to drive a portion of the electropositive dopant to the interfaces.
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申请公布号 |
US6841458(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20020241890 |
申请日期 |
2002.09.12 |
申请人 |
INTEL CORPORATION |
发明人 |
DUBIN VALERY M.;FABER JACOB M. |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/04 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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