发明名称 Magnetic random access memory
摘要 One end of a write word line is connected to a decoder/driver unit. The decoder/driver unit is constituted by a P channel MOS transistor, an N channel MOS transistor, a differential amplifier, and an NAND circuit. When WRITE, CHRDY and RA1 all become "H", an output signal from the NAND circuit becomes "H", and a write current flows through the write word line. At this moment, a value of the write current is restricted to a value which does not exceed VLIMIT/R1 by the differential amplifier. R1 is a wiring resistance of the write word line.
申请公布号 US6842362(B2) 申请公布日期 2005.01.11
申请号 US20030368609 申请日期 2003.02.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUJITA KATSUYUKI;IWATA YOSHIHISA
分类号 G11C11/15;G11C8/08;G11C11/16;(IPC1-7):G11C11/00 主分类号 G11C11/15
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