发明名称 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
摘要 A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.
申请公布号 US6840988(B2) 申请公布日期 2005.01.11
申请号 US20030365204 申请日期 2003.02.11
申请人 MICRON TECHNOLOGY, INC. 发明人 MARSH EUGENE P.;UHLENBROCK STEFAN
分类号 C23C16/18;C23C16/40;H01L21/02;H01L21/285;(IPC1-7):C23C16/16 主分类号 C23C16/18
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