| 发明名称 |
MOS transistor and switching power supply |
| 摘要 |
MOS transistor cells 1 and MOS transistor cells 2 having different gate threshold voltages are formed on a chip 8. The MOS transistor cells 1, 2 having the different gate threshold voltages are connected in parallel.
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| 申请公布号 |
US6841835(B2) |
申请公布日期 |
2005.01.11 |
| 申请号 |
US20030441678 |
申请日期 |
2003.05.20 |
| 申请人 |
FUNAI ELECTRIC CO., LTD. |
发明人 |
MIYAMOTO HITOSHI |
| 分类号 |
H01L21/8234;H01L29/06;H01L29/423;H01L29/76;H01L29/78;H01L31/0328;H02M3/335;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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