发明名称 |
Antifuse structure and a method of forming an antifuse structure |
摘要 |
The present invention comprises an antifuse having a hemispherical grained (HSG) layer and a method of forming antifuse having a hemispherical grained (HSG) layer. The antifuse of the present invention comprises a plurality of layers, the first being a lower electrode that is disposed on an impurity region in a semiconductor substrate. A dielectric layer is disposed on the lower electrode, wherein the dielectric layer has a planar surface. A non-conductive hemispherical grain (HSG) layer is formed on the planar surface of the dielectric layer and an upper electrode is disposed on said non-conductive hemispherical grain (HSG) layer forming the antifuse.
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申请公布号 |
US6841846(B1) |
申请公布日期 |
2005.01.11 |
申请号 |
US20030625491 |
申请日期 |
2003.07.22 |
申请人 |
ACTEL CORPORATION |
发明人 |
CHEN HUNG-SHENG;TSENG HUAN-CHUNG;HUANG CHANG-KAI |
分类号 |
H01L23/525;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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