发明名称 |
Method for cleaning a semiconductor device |
摘要 |
In order to clean a semiconductor device having a dielectric layer deposited on a top surface of a lower metal wiring of the semiconductor device, and a contact hole or a via hole formed in the dielectric layer to expose the lower metal line therethrough, the semiconductor device is located within a radio frequency (RF) cleaning chamber. A gas mixture of HCl and H2O is introduced into the RF cleaning chamber and Ar gas plasma is generated in the RF cleaning chamber to excite HCl gas so that the HCl gas and an excited HCl gas are used to remove carbon radicals and metal particles.
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申请公布号 |
US6840249(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20020328028 |
申请日期 |
2002.12.26 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SEO BO MIN |
分类号 |
H01L21/28;H01L21/302;H01L21/306;H01L21/3065;H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):B08B7/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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