发明名称 Semiconductor memory device with clock generating circuit
摘要 A DLL clock control circuit determines whether or not an operating frequency is a low frequency satisfying a prescribed condition, based on signals received from a DLL circuit and a READ control circuit. When the DLL clock control circuit determines that the operating frequency is a low frequency, the DLL clock control circuit outputs a DLL clock received from the DLL circuit if a first signal to be activated in response to a READ command is activated, while when determining that an operating frequency is not a low frequency, outputting a DLL clock received from the DLL circuit if a second signal to be activated in response to an ACT command is activated. As a result, a semiconductor memory device can guarantees a data output operating in data reading and can reduce power consumption during active standby.
申请公布号 US6842396(B2) 申请公布日期 2005.01.11
申请号 US20030387503 申请日期 2003.03.14
申请人 RENESAS TECHNOLOGY CORP. 发明人 KONO TAKASHI
分类号 G11C11/407;G11C7/22;G11C11/4076;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/407
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