发明名称 Method for cleaning plasma etch chamber structures
摘要 A method for cleaning a plasma reactor clamber part (100) may include dipping the chamber part in a solvent (102) that may dissolve a material that has been redistributed on the chamber part by a reactive plasma. A chamber part may then be rinsed (104), ultrasonically cleaned (106) in a ultrasonic cleaning liquid, and then rinsed again with a liquid that may evaporate at a lower temperature than an ultrasonic cleaning liquid (108). A chamber part may then be blown dry (110) and baked (112). In addition, or alternatively, a method may also include plasma cleaning a chamber part (202).
申请公布号 US6841008(B1) 申请公布日期 2005.01.11
申请号 US20000617454 申请日期 2000.07.17
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 BRANCO WALTER G.;QIAO JIANMIU
分类号 B08B3/12;B08B9/08;(IPC1-7):B08B7/04 主分类号 B08B3/12
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