发明名称 |
Method for cleaning plasma etch chamber structures |
摘要 |
A method for cleaning a plasma reactor clamber part (100) may include dipping the chamber part in a solvent (102) that may dissolve a material that has been redistributed on the chamber part by a reactive plasma. A chamber part may then be rinsed (104), ultrasonically cleaned (106) in a ultrasonic cleaning liquid, and then rinsed again with a liquid that may evaporate at a lower temperature than an ultrasonic cleaning liquid (108). A chamber part may then be blown dry (110) and baked (112). In addition, or alternatively, a method may also include plasma cleaning a chamber part (202).
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申请公布号 |
US6841008(B1) |
申请公布日期 |
2005.01.11 |
申请号 |
US20000617454 |
申请日期 |
2000.07.17 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
BRANCO WALTER G.;QIAO JIANMIU |
分类号 |
B08B3/12;B08B9/08;(IPC1-7):B08B7/04 |
主分类号 |
B08B3/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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