Method of manufacturing Er-doped silicon nano-dot array and laser ablation appparatus used therein

摘要

A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume. The Er-doped silicon film is patterned.