| 摘要 |
In one data read operation, data read for reading stored data before and after a predetermined data write magnetic field is applied to a selected memory cell, respectively, is executed, and the data read is executed in accordance with comparison of voltage levels corresponding to the data read operations before and after application of the predetermined data write magnetic field. In addition, data read operations before and after the application of a data write magnetic field are executed using read modify write. It is thereby possible to avoid an influence of an offset or the like resulting from manufacturing irregularities in respective circuits forming a data read path, to improve efficiency of the data read operation with accuracy and to execute a high rate data read operation.
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