发明名称 |
Magnetoresistive element, magnetic head, magnetic memory and magnetic recording apparatus using the same |
摘要 |
A magnetoresistive element includes a multilayer film configuration including: a tunnel insulation layer; and a pair of magnetic layers that are laminated with the tunnel insulation layer interposed therebetween. A resistance value of the magnetoresistive element varies with a relative angle between magnetic orientations of both of the magnetic layers, and at least one of the magnetic layers includes a magnetic film having a thermal expansion coefficient not greater than a value obtained by adding 2x10<-6>/K to a thermal expansion coefficient of the tunnel insulation layer. The thus configured magnetoresistive element can exert excellent thermal stability. The use of such a magnetoresistive element can realize a magnetic head, a magnetic memory element and a magnetic recording apparatus with excellent thermal stability.
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申请公布号 |
US6842317(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20030692362 |
申请日期 |
2003.10.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGITA YASUNARI;ODAGAWA AKIHIRO;MATSUKAWA NOZOMU |
分类号 |
G01R33/09;G11B5/00;G11B5/39;H01F10/32;(IPC1-7):G11B5/39;H01F10/14 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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