发明名称 |
Method of fabricating a magneto-resistive random access memory (MRAM) device |
摘要 |
A method of etching a multi-layer magnetic stack (e.g., layers of cobalt-iron alloy (CoFe), ruthenium (Ru), platinum-manganese alloy (PtMn), and the like) of a magneto-resistive random access memory (MRAM) device is disclosed. Each layer of the multi-layer magnetic stack is etched using a process sequence including a plasma etch step followed by a plasma treatment step. The plasma treatment step uses a plasma comprising an inert gas to remove residues formed during the plasma etch step.
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申请公布号 |
US6841484(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20030418449 |
申请日期 |
2003.04.17 |
申请人 |
YING CHENTSAU;CHEN XIAOYI;YAN CHUN;KUMAR AJAY |
发明人 |
YING CHENTSAU;CHEN XIAOYI;YAN CHUN;KUMAR AJAY |
分类号 |
H01L21/3065;C23F4/00;H01F41/30;H01L21/02;H01L21/3213;H01L21/8246;H01L27/105;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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