发明名称 |
Heterostructure semiconductor device |
摘要 |
A heterostructure semiconductor device that includes a composite layer between an active layer and a gate. The composite layer includes a strain matching layer and a barrier layer. The strain matching layer reduces the strain between the barrier layer and the active layer. The device can incorporate various additional layers as well as gate and/or contact configurations to obtain desired device performance characteristics.
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申请公布号 |
US6841809(B2) |
申请公布日期 |
2005.01.11 |
申请号 |
US20030659183 |
申请日期 |
2003.09.10 |
申请人 |
SENSOR ELECTRONIC TECHNOLOGY, INC. |
发明人 |
FAREED QHALID;GASKA REMIGIJUS;SHUR MICHAEL |
分类号 |
H01L21/335;H01L29/20;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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